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9 March 2013 A smaller footprint MEMS sensor for on-chip temperature measurement
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In this paper, a new MEMS capacitive temperature sensor is presented which is based on a circular silicon plate with a gold annulus deposited on top forming a novel bimaterial structure. The bimaterial structure is anchored to a substrate on its edge and forms the top electrode of a capacitor. A stationary silicon electrode beneath the bimaterial structure forms the second electrode. The PolyMUMPs® foundry process has been used to fabricate the device. Experiments show that for an effective area of about 0.1 mm2 this MEMS capacitive temperature sensor achieves a sensitivity of 0.75±0.25 fF/°C over the temperature range of 25 to 225 °C, which shows an improvement of more than 25% over equivalent microcantilever devices with the same effective area. Numerical modeling is used to show that the new design exhibits high flexibility in tailoring its thermomechanical response over the desired temperature range. The simplicity of its design and flexibility of the materials from which it can be constructed also makes this new MEMS sensor a good onchip temperature measurement device for MEMS characterization.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Najafi Sohi, P. Nieva, and A. Khajepour "A smaller footprint MEMS sensor for on-chip temperature measurement", Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 86140B (9 March 2013);


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