Temperature compensated silicon resonators for space applications

Mina Rais-Zadeh; Vikram A. Thakar; Zhengzheng Wu; Adam Peczalski

doi:10.1117/12.2001434

9 March 2013 Temperature compensated silicon resonators for space applications

Mina Rais-Zadeh, Vikram A. Thakar, Zhengzheng Wu, Adam Peczalski

Proceedings Volume 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII; 86140E (2013) https://doi.org/10.1117/12.2001434
Event: SPIE MOEMS-MEMS, 2013, San Francisco, California, United States

Abstract

This paper presents piezoelectric transduction and frequency trimming of silicon-based resonators with a center frequency in the low megahertz regime. The temperature coefficient of frequency (TCF) of the resonators is reduced using both passive and active compensation schemes. Specifically, a novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation while maintaining compatibility with wet release processes. Using this method, we demonstrate high-Q resonators having a first-order TCF as low as 3 ppm/°C and a turnover temperature of around 90 °C, ideally suited for use in ovenized platforms. Using active tuning, the temperature sensitivity of the resonator is further compensated around the turnover temperature, demonstrating frequency instability of less than 400 ppb. Such devices are ideally suited as timing units in space applications where size, power consumption, and temperature stability are of critical importance.

Citation Download Citation

Mina Rais-Zadeh, Vikram A. Thakar, Zhengzheng Wu, and Adam Peczalski "Temperature compensated silicon resonators for space applications", Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 86140E (9 March 2013); https://doi.org/10.1117/12.2001434

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