9 March 2013 High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS
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Abstract
A System-in-Package (SiP) concept for the 3D-integration of a Single Wall Carbon Nanotube (SWCNT) resonator with its CMOS driving electronics is presented. The key element of this advanced SiP is the monolithic 3D-integration of the MEMS with the CMOS electronics using Through Silicon Vias (TSVs) on an SOI wafer. This SiP includes: A glass cap vacuum-sealed to the main wafer using an eutectic bonding process: a low leak rate of 2.7 10-9 mbar•l/s was obtained; Platinum-TSVs, compatible with the SWCNT growth and release process; The TSVs were developed in a “via first” process and characterized at high-temperature — up to 850 °C. An ohmic contact between the Pt-metallization and the SOI silicon device layer was obtained; The driving CMOS electronic device is assembled to the MEMS using an Au stud bump technology. Keywords: System-in-Package (SiP), vacuum packaging, eutectic bonding, “via-first” TSVs, high-temperature platinum interconnects, ohmic contacts, Au-stud bumps assembly, CMOS electronics.
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R. Gueye, R. Gueye, S. W. Lee, S. W. Lee, T. Akiyama, T. Akiyama, D. Briand, D. Briand, C. Roman, C. Roman, C. Hierold, C. Hierold, N. F. de Rooij, N. F. de Rooij, } "High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS", Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 86140H (9 March 2013); doi: 10.1117/12.2006216; https://doi.org/10.1117/12.2006216
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