14 March 2013 Light extraction by Lambertian sources from light emitting diodes
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Proceedings Volume 8619, Physics and Simulation of Optoelectronic Devices XXI; 86190L (2013); doi: 10.1117/12.2002115
Event: SPIE OPTO, 2013, San Francisco, California, United States
Internal back-and-forth propagation of photons within a light emitting diode (LED) will naturally tend towards a Lambertian intensity profile when surface texturing is sufficiently rough. Novel designs in light extraction efficiency (LEE) can therefore benefit by optimizing under this expectation. This paper develops a framework for calculating LEE from a planar LED structure with textured surface features under the assumption of Lambertian intensity within the substrate. The method can estimate the total LEE value when given a substrate width w, an attenuation constant α, and the transmittance function T(θ,Φ) through the top interface. We demonstrate our theory on a pyramidal surface texture over a GaSb substrate at 4.5 μm wavelength by computing the expected LEE as a function of w.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Nagel, "Light extraction by Lambertian sources from light emitting diodes", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190L (14 March 2013); doi: 10.1117/12.2002115; http://dx.doi.org/10.1117/12.2002115

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