14 March 2013 Impacts of carrier capture and relaxation rates on the modulation response of injection-locked quantum dot lasers
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Abstract
Taking into account the carrier dynamics in the wetting layer, excited state and the ground state, the intensity modulation properties of an injection-locked quantum dot laser are studied theoretically through a semi-analytical approach. It is demonstrated that both high carrier capture and relaxation rates enhance the modulation bandwidth as well as the resonance-peak amplitude. Moreover, the pre-resonance dip arising under positive detuning can be eliminated as well, which is beneficial for further bandwidth enhancement. It is also found that a large capture time reduces both the resonance frequency and the damping factor while both are increased by a large relaxation time.
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Cheng Wang, Frédéric Grillot, Jacky Even, "Impacts of carrier capture and relaxation rates on the modulation response of injection-locked quantum dot lasers", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 861908 (14 March 2013); doi: 10.1117/12.2001929; https://doi.org/10.1117/12.2001929
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