You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
14 March 2013Light extraction by Lambertian sources from light emitting diodes
Internal back-and-forth propagation of photons within a light emitting diode (LED) will naturally tend towards a Lambertian intensity profile when surface texturing is sufficiently rough. Novel designs in light extraction efficiency (LEE) can therefore benefit by optimizing under this expectation. This paper develops a framework for calculating LEE from a planar LED structure with textured surface features under the assumption of Lambertian intensity within the substrate. The method can estimate the total LEE value when given a substrate width w, an attenuation constant α, and the transmittance function T(θ,Φ) through the top interface. We demonstrate our theory on a pyramidal surface texture over a GaSb substrate at 4.5 μm wavelength by computing the expected LEE as a function of w.
James R. Nagel
"Light extraction by Lambertian sources from light emitting diodes", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190L (14 March 2013); https://doi.org/10.1117/12.2002115
The alert did not successfully save. Please try again later.
James R. Nagel, " Light extraction by Lambertian sources from light emitting diodes ," Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190L (14 March 2013); https://doi.org/10.1117/12.2002115