14 March 2013 Top-flat and top-patterned cone gratings for mid-infrared antireflective properties
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Abstract
Achieving a broadband antireflection property from material surfaces is one of the highest priorities for those who want to improve the efficiency of solar cells or the sensitivity of photo-detectors. To lower the reflectance of a surface, we have decided to study the optical response of a top-flat cone shaped silicon grating, based on previous work exploring pyramid gratings.

Through rigorous numerical methods, such as Finite Different Time Domain or Rigorous Coupled-Wave Analysis, we then designed several structures theoretically demonstrating an antireflective character within the middle infrared region. From the opto-geometrical parameters such as period, depth and shape of the pattern determined by numerical analysis, these structures have been fabricated using controlled slope plasma etching processes. Afterwards, optical characterizations of several samples were carried out. The reflectance of the grating in the near and middle infrared domains has been measured by Fourier Transform Infrared spectrometry and a comparison with numerical analysis has been made.

As expected, those structures offer a fair antireflective character in the region of interest. Further numerical investigations led to the fact that patterning the top of the cone could enlarge the antireflective domain to the visible region. Thus, as with the simple cone grating, a comparison of the numerical analysis with the experimental measurements is made. Finally, diffracted orders are studied and compared between both structures. Those orders are critical and must be limited as one wants to avoid crosstalk phenomena in imaging systems.
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Jean-Baptiste Brückner, Jean-Baptiste Brückner, Judikaël Le Rouzo, Judikaël Le Rouzo, Ludovic Escoubas, Ludovic Escoubas, François Flory, François Flory, Jean-Jacques Simon, Jean-Jacques Simon, Gérard Berginc, Gérard Berginc, } "Top-flat and top-patterned cone gratings for mid-infrared antireflective properties", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190U (14 March 2013); doi: 10.1117/12.2004299; https://doi.org/10.1117/12.2004299
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