Electrical design for lateral junction photonic crystal lasers

Jan Petykiewicz; Gary Shambat; Bryan Ellis; Jelena Vučković

doi:10.1117/12.2008775

14 March 2013 Electrical design for lateral junction photonic crystal lasers

Jan Petykiewicz, Gary Shambat, Bryan Ellis, Jelena Vučković

Proceedings Volume 8619, Physics and Simulation of Optoelectronic Devices XXI; 86190W (2013) https://doi.org/10.1117/12.2008775
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

We model conduction and free-carrier injection in laterally doped GaAs p-i-n diodes formed in one and twodimensional photonic crystal (PC) nanocavities. Finite element simulations show that the lateral geometry exhibits high electrical conductivity for a wide range of PC parameters and allows for precise control over current flow, enabling efficient carrier injection despite fast surface recombination. Thermal simulations indicate that the temperature increase during steady-state operation is only 3.3K in nanobeams and 0.29K in L3 defect nanocavities. The results affirm the suitability of lateral doping in PC devices and indicate criteria for further design optimization.

Citation Download Citation

Jan Petykiewicz, Gary Shambat, Bryan Ellis, and Jelena Vučković "Electrical design for lateral junction photonic crystal lasers", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190W (14 March 2013); https://doi.org/10.1117/12.2008775

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