14 March 2013 Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K
Author Affiliations +
Abstract
A ridge-waveguide 1.55-μm semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, series resistance, differential efficiency, and emission wavelength, extracted from standard L-I/I-V measurements, is reported. The applicability of the standard ideal-diode model of semiconductor laser at cryogenic temperatures is analyzed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emmanuel Mercado, Emmanuel Mercado, Dipendra Adhikari, Dipendra Adhikari, Gennady A. Smolyakov, Gennady A. Smolyakov, Marek Osiński, Marek Osiński, } "Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 861913 (14 March 2013); doi: 10.1117/12.2010029; https://doi.org/10.1117/12.2010029
PROCEEDINGS
11 PAGES


SHARE
Back to Top