14 March 2013 Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility
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Optical and electronic devices for optoelectronic integrated circuits have been extensively studied, and now, more efforts for the conversion between optical and electrical signals are accordingly required. In this work, a silicon (Si)-compatible optically drivable III-V-on-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is studied by simulation. The proposed optoelectronic device provides a strong interface between the optical and the electronic platforms as a key component of the optical interconnect. The optically driven MOSFET device is analogously analyzed into a photodetector and its complementary device, getting rid of receiver circuitry, which improves the integration density and simplifies the fabrication processes. To realize the optical switching with maximized photo-sensing region, a bottom gate is formed to modulate the channel, where germanium (Ge) and gallium arsenide (GaAs) are the active materials on Si platform. Both direct-current (DC) and alternating-current (AC) performances of an optimized device are evaluated.
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Seongjae Cho, Hyungjin Kim, S. J. Ben Yoo, Byung-Gook Park, James S. Harris, "Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86191M (14 March 2013); doi: 10.1117/12.2005813; https://doi.org/10.1117/12.2005813


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