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25 March 2013 Intraband carrier dynamics in InAs/GaAs quantum dots studied by two-color excitation spectroscopy
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Abstract
We have studied time-resolved intraband transition from the intermediate state to the continuum state of the conduction band in InAs/GaAs self-assembled quantum dots embedded in a one-dimensional photonic cavity structure using a two-color photoexcitation spectroscopy. The photonic gap was tuned to enhance the excitation from the intermediate state to the conduction band, whose energy is selected to be less than the interband transition energy between the intermediate state and the quantized hole state. The photoluminescence intensity was observed to be dramatically reduced by selectively pumping carriers in the intermediate state. This effect has been analyzed by modeling detailed carrier relaxation process.
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Yukihiro Harada, Tsuyoshi Maeda, and Takashi Kita "Intraband carrier dynamics in InAs/GaAs quantum dots studied by two-color excitation spectroscopy", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 862008 (25 March 2013); https://doi.org/10.1117/12.2003423
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