25 March 2013 Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate-band solar cells with separated absorption and depletion regions
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Abstract
We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAs absorber with built-in GaSb type-II quantum dots (QDs) [a gradual AlxGa1-xAs absorber with built-in AlyGa1-ySb QDs (0<x=y<0.40) as a variant] separated from the depletion region. We study the modification of the band alignment at type-II interface by two-photon absorption of concentrated sunlight. Our calculation shows that photogenerated carriers produce localized exciton-like electron-hole pairs spatially separated at QDs. Local field of such pairs may essentially modify potential barrier surrounding QDs, increase recombination lifetime of mobile carriers and additional photocurrent generated by two photon absorption. Concentration of about 300-sun pushes by 15% up the conversion efficiency as compared to the efficiency of the reference single junction GaAs solar cell without QDs.
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A. Kechiantz, A. Kechiantz, A. Afanasev, A. Afanasev, J.-L. Lazzari, J.-L. Lazzari, } "Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate-band solar cells with separated absorption and depletion regions", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86200K (25 March 2013); doi: 10.1117/12.2002455; https://doi.org/10.1117/12.2002455
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