25 March 2013 Characterization of radiation tolerance in doping superlattice solar cells
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Abstract
Doping superlattice devices have been pursued in part because of their inherent radiation hardness which results from long lifetimes and minimum diffusion length requirements in the range of nanometers. Diffusion length requirements are reduced because of the multiple closely spaced doped layers in the superlattice. Higher doping levels in conjunction with close superlattice spacing result in large electric fields in the range of 5x105 V/cm that quickly collect carriers into the majority doped layers. The effect of the alternative solar cell structure will be studied by irradiating multiple device structures with 5.057 MeV alpha particles. Comparisons will be made between doping superlattice devices and single junction pin structures. Previous work developing a simulation routine to characterize the radiation response for these devices will be extended to confirm the predictive model developed. This work signifies a step forward in understanding the radiation effects of doping superlattice devices, and their potential for high radiation environments.
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Michael A. Slocum, Michael A. Slocum, David V. Forbes, David V. Forbes, Mihir H. Bohra, Mihir H. Bohra, Seth M. Hubbard, Seth M. Hubbard, } "Characterization of radiation tolerance in doping superlattice solar cells", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86200Y (25 March 2013); doi: 10.1117/12.2005626; https://doi.org/10.1117/12.2005626
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