25 March 2013 GaN microdomes for broadband omnidirectional antireflection for concentrator photovoltaics
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GaN microdomes are studied as a broadband omnidirectional anti-reflection structure for high efficiency multi-junction concentrated photovoltaics. Comprehensive studies of the effect of GaN microdome sizes and shapes on the light collection efficiency were studied. The three dimensional finite difference time domain (3-D FDTD) method was used to calculate the surface reflectance of GaN microdomes as compared to that of the flat surface. Studies indicate significant reduction of the surface reflectance is achievable by properly designing the microdome structures. Formation of the GaN microdomes with the flexibility to tune the size and shape has been demonstrated by using reactive ion etching (RIE) of both GaN and the self-assembled silica monolayer microspheres. Characterizations of the angle-dependence light surface reflectance for both micro-domes and flat surface show the similar trend as the simulation.
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Lu Han, Lu Han, Matthew R. McGoogan, Matthew R. McGoogan, Tyler A. Piedimonte, Tyler A. Piedimonte, Ian V. Kidd, Ian V. Kidd, Roger H. French, Roger H. French, Hongping Zhao, Hongping Zhao, "GaN microdomes for broadband omnidirectional antireflection for concentrator photovoltaics", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 862016 (25 March 2013); doi: 10.1117/12.2002864; https://doi.org/10.1117/12.2002864

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