25 March 2013 Drift-diffusion modeling of InP-based triple junction solar cells
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Abstract
In this work, we use an analytical drift-diffusion model, coupled with detailed carrier transport and minority carrier lifetime estimates, to make realistic predictions of the conversion efficiency of InP-based triple junction cells. We evaluate the possible strategies for overcoming the problematic top cell for the triple junction, and make comparisons of the more realistic charge transport model with incumbent technologies grown on Ge or GaAs substrates.
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M. P. Lumb, M. P. Lumb, M. González, M. González, C. G. Bailey, C. G. Bailey, I. Vurgaftman, I. Vurgaftman, J. R. Meyer, J. R. Meyer, J. Abell, J. Abell, M. Yakes, M. Yakes, R. Hoheisel, R. Hoheisel, J. G. Tischler, J. G. Tischler, P. N. Stavrinou, P. N. Stavrinou, M. Fuhrer, M. Fuhrer, N. J. Ekins-Daukes, N. J. Ekins-Daukes, R. J. Walters, R. J. Walters, } "Drift-diffusion modeling of InP-based triple junction solar cells", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201G (25 March 2013); doi: 10.1117/12.2005332; https://doi.org/10.1117/12.2005332
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