25 March 2013 Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique
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Abstract
Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm-3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm2 have been observed.
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N. Rahimi, N. Rahimi, A. A. Aragon, A. A. Aragon, O. S. Romero, O. S. Romero, D. M. Kim, D. M. Kim, N. B. J. Traynor, N. B. J. Traynor, T. J. Rotter, T. J. Rotter, G. Balakrishnan, G. Balakrishnan, S. D. Mukherjee, S. D. Mukherjee, L. F. Lester, L. F. Lester, } "Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201K (25 March 2013); doi: 10.1117/12.2003392; https://doi.org/10.1117/12.2003392
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