25 March 2013 Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots
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Abstract
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAsbased solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region. Due to inelastic scattering of photoelectrons on QDs and proper doping of both QDs and their spacers, concentrated sunlight is predicted to quench recombination through QDs. Our calculation shows that 500-sun concentration can increase the Shockley-Queisser limit from 35% to 40% for GaAs single-junction solar cells.
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A. Kechiantz, A. Kechiantz, A. Afanasev, A. Afanasev, } "Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201Q (25 March 2013); doi: 10.1117/12.2002564; https://doi.org/10.1117/12.2002564
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