20 February 2013 PbSe quantum dots grown in a high-index, low-melting-temperature glass for infrared laser applications
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Proceedings Volume 8621, Optical Components and Materials X; 862104 (2013) https://doi.org/10.1117/12.2001079
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
PbSe quantum dots (QDs) were grown in high-refractive-index low-melting-temperature leadphosphate glass. QDs with various sizes ranging from 2 nm to 5.3 nm were grown by controlling the growth parameters, heat-treatment temperature and time. The corresponding room-temperature exciton absorption was tuned within the infrared region from 0.93 μm to 2.75 μm. Photoluminescence was measured for samples with absorption peaks above 0.95eV. Real time quantum dot growth was demonstrated by monitoring the evolution of exciton absorption with temperature and time duration. As a demonstration of the use of QDs in laser applications, the saturation fluence (Fsat) of one of the QDs was evaluated and found to be ~2.1 μJ/cm2 at 1.2 μm.
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P. Kannan, A. Choudhary, B. Mills, V. M. Leonard, D. W. Hewak, X. Feng, D. P. Shepherd, "PbSe quantum dots grown in a high-index, low-melting-temperature glass for infrared laser applications", Proc. SPIE 8621, Optical Components and Materials X, 862104 (20 February 2013); doi: 10.1117/12.2001079; https://doi.org/10.1117/12.2001079
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