11 March 2013 Photoluminescence and anti-deliquesce of cesium iodide and its sodium-doped films deposited by thermal evaporation at high deposition rates
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Proceedings Volume 8621, Optical Components and Materials X; 862115 (2013) https://doi.org/10.1117/12.2002308
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Cesium iodide (CsI) and sodium iodide (NaI) are good scintillators due to their high luminescence efficiency. These alkali halides can be excited by ultra-violet or by ionizing radiation. In this study, CsI and its Na-doped films about 8 μm thick were deposited by thermal evaporation boat without heating substrates at high deposition rates of 30, 50, 70, 90, and 110 nm/sec, respectively. The as-deposited films were sequentially deposited a silicon dioxide film to protect from deliquesce. And, the films were also post-annealed in vacuum at 150, 200, 250, and 300 °C, respectively. We calculated the packing densities of the samples according to the measurements of Fourier transform infrared spectroscopy (FTIR) and observed the luminescence properties by photoluminescence (PL) system. The surfaces and cross sections of the films were investigated by scanning electron microscope (SEM). From the above measurements we can find the optimal deposition rate of 90 nm/sec and post-annealing temperature of 250 °C in vacuum for the asdeposited cesium iodide and its sodium-doped films.
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Jin-Cherng Hsu, Jin-Cherng Hsu, Yueh-Sheng Chiang, Yueh-Sheng Chiang, Yu-Sheng Ma, Yu-Sheng Ma, } "Photoluminescence and anti-deliquesce of cesium iodide and its sodium-doped films deposited by thermal evaporation at high deposition rates", Proc. SPIE 8621, Optical Components and Materials X, 862115 (11 March 2013); doi: 10.1117/12.2002308; https://doi.org/10.1117/12.2002308
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