11 March 2013 UV-enhanced silicon avalanche photodiodes
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Proceedings Volume 8621, Optical Components and Materials X; 86211H (2013) https://doi.org/10.1117/12.2003993
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Silicon avalanche photodiodes (APDs) fabricated through a deep diffusion process underwent a modified surface treatment in an attempt to improve their response in the ultraviolet region of the optical spectrum. After adjusting the doping profile in the near-surface region of the detectors, APDs were fabricated and tested at several wavelengths from ultraviolet to the near-infrared. At the target wavelength of 355 nm, the detector bandwidth was increased by a factor of 20 over devices fabricated without the modified surface treatment. Modest improvements in the internal quantum efficiency were also measured. Most importantly, the modified detectors maintained the high gain and low noise performance specifications that are hallmarks of traditional deep diffusion APDs.
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Richard A. Myers, Richard A. Myers, Richard Farrell, Richard Farrell, Suzannah L. Riccardi, Suzannah L. Riccardi, Mickel McClish, Mickel McClish, } "UV-enhanced silicon avalanche photodiodes", Proc. SPIE 8621, Optical Components and Materials X, 86211H (11 March 2013); doi: 10.1117/12.2003993; https://doi.org/10.1117/12.2003993
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