11 March 2013 High near-infrared emission intensity of Er3+-doped zirconium oxide films on a Si(100) substrate
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Proceedings Volume 8621, Optical Components and Materials X; 86211K (2013) https://doi.org/10.1117/12.2004783
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
High crystalline quality erbium-doped zirconium oxide films were deposited on Si(100) by electron beam evaporation in high vacuum. Characteristics of light emission in the telecommunication window from erbium oxide crystal zirconium oxide films were investigated before and after furnace annealing in oxygen atmosphere. The luminescence intensity of the erbium-doped thin film after annealing at 900 °C was 18 times higher than those before thermal annealing. Also, it was observed a decrease in the intensity of luminescence and the 4I13/2 lifetime with the increase of the erbium concentration, which was analyzed via energy transfer - quenching. The structure environment of the erbium ion in the thin film before and after annealing has been studied by X-ray diffraction. The surface morphology of the films as a function of the annealing temperature and atmosphere showed a significant change.
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V. A. G. Rivera, F. A. Ferri, J. L. Clabel H., M. K. Kawamura, M. A. Pereira-da-Silva, L. A. O. Nunes, M. Siu Li, E. Marega, "High near-infrared emission intensity of Er3+-doped zirconium oxide films on a Si(100) substrate", Proc. SPIE 8621, Optical Components and Materials X, 86211K (11 March 2013); doi: 10.1117/12.2004783; https://doi.org/10.1117/12.2004783
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