27 March 2013 Room temperature generation of THz radiation in GaN quantum wells structures
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Abstract
Emission of terahertz (THz) radiations from interdigitated GaN quantum-wells structures under DC-bias has been measured at room temperature. This measurements has been performed by a 4K Si-Bolometer associated with a Fourier Transform Spectrometer. Using an analytical model, we have shown that the observed peak at approximately 3 THz due to 2D ungated plasma-waves oscillations in the quantum well, is emitted by the metallic contacts of our device acting as antennas.
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A. Penot, A. Penot, J. Torres, J. Torres, P. Nouvel, P. Nouvel, L. Varani, L. Varani, F. Teppe, F. Teppe, C. Consejo, C. Consejo, N. Dyakonova, N. Dyakonova, W. Knap, W. Knap, Y. Cordier, Y. Cordier, S. Chenot, S. Chenot, M. Chmielowska, M. Chmielowska, J.-P. Faurie, J.-P. Faurie, B. Beaumont, B. Beaumont, P. Shiktorov, P. Shiktorov, E. Starikov, E. Starikov, V. Gruzinskis, V. Gruzinskis, } "Room temperature generation of THz radiation in GaN quantum wells structures", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 862409 (27 March 2013); doi: 10.1117/12.2002504; https://doi.org/10.1117/12.2002504
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