Translator Disclaimer
27 March 2013 Room temperature generation of THz radiation in GaN quantum wells structures
Author Affiliations +
Emission of terahertz (THz) radiations from interdigitated GaN quantum-wells structures under DC-bias has been measured at room temperature. This measurements has been performed by a 4K Si-Bolometer associated with a Fourier Transform Spectrometer. Using an analytical model, we have shown that the observed peak at approximately 3 THz due to 2D ungated plasma-waves oscillations in the quantum well, is emitted by the metallic contacts of our device acting as antennas.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, J.-P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, and V. Gruzinskis "Room temperature generation of THz radiation in GaN quantum wells structures", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 862409 (27 March 2013);

Back to Top