27 March 2013 Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices
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Abstract
Recent progress in the investigation of millimeter-wave and THz detectors based on plasmon excitation in the twodimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) is reported. A tunable resonant polarized photoresponse to mm-wave radiation in the frequency range of 40 to 110 GHz is demonstrated for a gratinggated InGaAs/InP based device. The gate consisted of a metal grating with period of 9 μm specifically designed for excitation of sub-THz plasmons. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. This resonant change in channel conductance enables potential applications in chip-scale frequency-agile detectors, which can be scaled to mid-THz frequencies.
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Nima Nader Esfahani, Nima Nader Esfahani, Robert E. Peale, Robert E. Peale, Walter R. Buchwald, Walter R. Buchwald, Joshua R. Hendrickson, Joshua R. Hendrickson, Justin W. Cleary, Justin W. Cleary, } "Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 86240Q (27 March 2013); doi: 10.1117/12.2006137; https://doi.org/10.1117/12.2006137
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