27 March 2013 Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers
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Abstract
We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization-sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers.
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Alessandra Di Gaspare, Alessandra Di Gaspare, Valeria Giliberti, Valeria Giliberti, Roberto Casini, Roberto Casini, Ennio Giovine, Ennio Giovine, Florestanto Evangelisti, Florestanto Evangelisti, Dominique Coquillat, Dominique Coquillat, Wojciech Knap, Wojciech Knap, Sergey Sadofev, Sergey Sadofev, Raffaella Calarco, Raffaella Calarco, Massimiliano Dispenza, Massimiliano Dispenza, Claudio Lanzieri, Claudio Lanzieri, Michele Ortolani, Michele Ortolani, } "Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 862416 (27 March 2013); doi: 10.1117/12.2004087; https://doi.org/10.1117/12.2004087
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