4 March 2013 Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy
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Abstract
This paper presents the growth of thick semipolar {10-11}, {11-22}, and {20-21} GaN layers on n, r, and {22-43} patterned sapphire substrates (PSSs), respectively, by hydride vapor phase epitaxy. The reduction rate of the dislocation density varied with growth planes. For {10-11} GaN layers, the dislocation density drastically decreased at over 100 μm, which was as fast the reduction rate as in the case of the c-plane. It was revealed that the reduction rate of the dislocation density could be controlled by the proper selection of the growth plane. We obtained a freestanding GaN of 2 inch diameter. Thick GaN growth led to the self-separation of the GaN layer from the PSS during cooling process. The separation plane formed at the interface between GaN and PSS, which is different from the case of a conventional c-plane GaN/sapphire. The separationability of the GaN layer from the PSS depended on the selective growth area of the sapphire sidewall.
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K. Yamane, K. Yamane, N. Okada, N. Okada, H. Furuya, H. Furuya, K. Tadatomo, K. Tadatomo, } "Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862503 (4 March 2013); doi: 10.1117/12.2007376; https://doi.org/10.1117/12.2007376
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