Translator Disclaimer
27 March 2013 Effect of internally focused laser processing of sapphire substrate on bowing management for III-nitride epitaxy
Author Affiliations +
We review a new approach to the bowing management of sapphire substrates for III-nitride epitaxy based on the internally focused laser processing. The laser process modifies the phase of the sapphire, inducing a volume expansion effect that enables the bow to be managed. Bowing control is required in two main areas: 1) control of the initial bow of the sapphire substrate, and 2) reduction in the bow after the epitaxy. The initial bow control was demonstrated for ~250 μm pre-bowed convex and concave sapphire substrates. The effect of the pre-bowed substrate on III-nitride epitaxy was also experimentally verified with an in situ curvature monitoring system during the III-nitride epitaxy; the possibility to accommodate substrate bowing to any target values by applying the initial offset to the substrate was also confirmed. When applied to the substrate after the epitaxy, the same technique was successful in flattening of the substrate for a subsequent chip-fabrication process. This new approach provides wide flexibility in the design engineering of epitaxial and device fabrication processes. Thus, it accelerates the realization of larger diameter device processes with III-nitride/sapphire.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Aida, Hitoshi Hoshino, Hidetoshi Takeda, Chikara Aikawa, Natsuko Aota, and Keiji Honjo "Effect of internally focused laser processing of sapphire substrate on bowing management for III-nitride epitaxy", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862507 (27 March 2013);


Large area bow free n+ GaN templates by HVPE for...
Proceedings of SPIE (March 07 2014)
Progress and challenges in GaN-on-Si LEDs
Proceedings of SPIE (March 07 2016)
Highly efficient InGaN GaN blue LEDs on large diameter Si...
Proceedings of SPIE (September 23 2011)
Highly efficient InGaN GaN blue LED on 8 inch Si...
Proceedings of SPIE (February 27 2012)
InGaN/GaN nanocolumn LEDs emitting from blue to red
Proceedings of SPIE (February 07 2007)
High-power GaN LED chip with low thermal resistance
Proceedings of SPIE (February 14 2008)

Back to Top