Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Michal Boćkowski; Boleslaw Lucznik; Tomasz Sochacki; Mikolaj Amilusik; Elzbieta Litwin-Staszewska; Ryszard Piotrzkowski; Izabella Grzegory

doi:10.1117/12.2002042

4 March 2013 Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Michal Boćkowski, Boleslaw Lucznik, Tomasz Sochacki, Mikolaj Amilusik, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Izabella Grzegory

Author Affiliations +

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862509 (2013) https://doi.org/10.1117/12.2002042
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Role and influence of impurities like: oxygen, indium and magnesium, on GaN crystals grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration is shown. The properties of differently doped GaN crystals are presented. The crystallization method and the technology based on it (for obtaining high quality GaN substrates) are described in details. Some electronic and optoelectronic devices built on those GaN substrates are demonstrated.

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Michal Boćkowski, Boleslaw Lucznik, Tomasz Sochacki, Mikolaj Amilusik, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, and Izabella Grzegory "Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862509 (4 March 2013); https://doi.org/10.1117/12.2002042

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