4 March 2013 HVPE-GaN growth on ammonothermal GaN crystals
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HVPE crystallization on ammonothermaly grown GaN crystals (A-GaN) is described. Preparation of the (0001) surface of the A-GaN crystals to the epi-ready state is presented. The HVPE initial growth conditions are determined and demonstrated. An influence of a thickness and a free carrier concentration in the initial substrate on quality and mode of growth by the HVPE is examined. Smooth GaN layers of excellent crystalline quality, without cracks, and with low dislocation density are obtained.
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Tomasz Sochacki, Tomasz Sochacki, Mikolaj Amilusik, Mikolaj Amilusik, Boleslaw Lucznik, Boleslaw Lucznik, Michal Boćkowski, Michal Boćkowski, Janusz L. Weyher, Janusz L. Weyher, Grzegorz Nowak, Grzegorz Nowak, Bogdan Sadovyi, Bogdan Sadovyi, Grzegorz Kamler, Grzegorz Kamler, Izabella Grzegory, Izabella Grzegory, Robert Kucharski, Robert Kucharski, Marcin Zajac, Marcin Zajac, Robert Doradzinski, Robert Doradzinski, Robert Dwilinski, Robert Dwilinski, "HVPE-GaN growth on ammonothermal GaN crystals", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250B (4 March 2013); doi: 10.1117/12.2003699; https://doi.org/10.1117/12.2003699


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