27 March 2013 Defects generation and annihilation in GaN grown on patterned silicon substrate
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The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.
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N. Sawaki, N. Sawaki, S. Ito, S. Ito, T. Nakagita, T. Nakagita, H. Iwata, H. Iwata, T. Tanikawa, T. Tanikawa, M. Irie, M. Irie, Y. Honda, Y. Honda, M. Yamaguchi, M. Yamaguchi, H. Amano, H. Amano, } "Defects generation and annihilation in GaN grown on patterned silicon substrate", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250K (27 March 2013); doi: 10.1117/12.2002738; https://doi.org/10.1117/12.2002738


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