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27 March 2013 Defects generation and annihilation in GaN grown on patterned silicon substrate
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The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Sawaki, S. Ito, T. Nakagita, H. Iwata, T. Tanikawa, M. Irie, Y. Honda, M. Yamaguchi, and H. Amano "Defects generation and annihilation in GaN grown on patterned silicon substrate", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250K (27 March 2013);


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