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4 March 2013 High efficient InGaN blue light emitting diode with embedded nanoporous structure
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We report a highly efficient GaN-based blue light-emitting diodes (LEDs) structure with an emitting wavelength of 450nm on flat sapphire substrate by utilizing a nano-porous (NP) GaN insertion layer. Unlike the LED on patterned sapphire substrates (PSS), the presented substrate has a new morphology which not only can generate an embedded nano-dimensional void structure as a mirror layer to reflect the light from active layers for enhancing the light extraction, but can also easily enlarge the wafer size to a large scale, such as wafer diameter larger than 6 inches. With a chip size of 45 mil × 45 mil under a driving current of 350 mA, the light output powers of the NP GaN LEDs without and with encapsulation are 455 and 554 mW respectively. The light output power is improved about 2 -fold comparing to the LED on a flat sapphire substrate, and even comparable to the LED on PSS which all of them have a flat p-type GaN surface. The characterization and performance of this newly NP LED structure will be discussed in detail.
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Wei-Chih Peng, Shih-Pang Chang, and Ta-Cheng Hsu "High efficient InGaN blue light emitting diode with embedded nanoporous structure", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250S (4 March 2013);


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