27 March 2013 The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors
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Abstract
We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 × 1015 cm-2, or to a different doses of 2 × 1011, 5 × 1013 or 2 × 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.
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L. Liu, L. Liu, C. F. Lo, C. F. Lo, Y. Y. Xi, Y. Y. Xi, Y. X. Wang, Y. X. Wang, H.-Y. Kim, H.-Y. Kim, J. Kim, J. Kim, S. J. Pearton, S. J. Pearton, O. Laboutin, O. Laboutin, Y. Cao, Y. Cao, J. W. Johnson, J. W. Johnson, I. I. Kravchenko, I. I. Kravchenko, F. Ren, F. Ren, } "The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250W (27 March 2013); doi: 10.1117/12.2007287; https://doi.org/10.1117/12.2007287
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