4 March 2013 True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates
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Abstract
We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate LDs grown by PAMBE operating in the range 450 – 460 nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation density (TDD) ranging from 103 cm-2 to 104 cm-2. The low TDD allowed us to fabricate cw LDs with the lifetime exceeding 2000 h at 10 mW of optical output power. The maximum output power for 3 LDs array in cw mode was 280 mW and 1W in pulse mode. The low temperature growth mode in PAMBE allow for growth of AlGaN-free LDs with high In content InGaN waveguides. The key element to achieve lasing wavelengths above 450 nm was the substantial increase of the nitrogen flux available during the growth by PAMBE.
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Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig R. Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski, "True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862512 (4 March 2013); doi: 10.1117/12.2001997; https://doi.org/10.1117/12.2001997
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