4 March 2013 Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate
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Abstract
We demonstrate the possibility of fabrication of InGaN laser diode with an extremely thin lower AlGaN cladding (200 nm) by using high electron concentration, plasmonic GaN substrate. The plasmonic substrates were fabricated by one of high-pressure methods – ammonothermal method or multi-feed-seed growth method and have an electron concentration from 5x1019 cm-3 up to 1x1020 cm-3. New plasmonic substrate devices, in spite of their extremely thin lower AlGaN cladding, showed identical properties to these manufactured with traditional, thick lower cladding design. They were characterized by identical threshold current density, slope efficiency and differential gain. Thin AlGaN devices are additionally characterized by low wafer bow and very low density of dislocations (<104 cm-2).
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Szymon Stańczyk, Szymon Stańczyk, Tomasz Czyszanowski, Tomasz Czyszanowski, Robert Kucharski, Robert Kucharski, Anna Kafar, Anna Kafar, Tadeusz Suski, Tadeusz Suski, Łucja Marona, Łucja Marona, Greg Targowski, Greg Targowski, Michał Boćkowski, Michał Boćkowski, Piotr Perlin, Piotr Perlin, } "Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862513 (4 March 2013); doi: 10.1117/12.2002440; https://doi.org/10.1117/12.2002440
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