27 March 2013 Latest developments in AlGaInN laser diode technology
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Abstract
The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to the visible, i.e., 380-530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range with high reliability. Low defectivity and highly uniform TopGaN and Ammono GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition, high power operation of AlGaInN laser diodes is demonstrated with the operation of a single chip, ‘mini-array’ consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.
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S. P. Najda, S. P. Najda, P. Perlin, P. Perlin, T. Suski, T. Suski, L. Marona, L. Marona, M. Boćkowski, M. Boćkowski, M. Leszczyński, M. Leszczyński, Przemyslaw Wisniewski, Przemyslaw Wisniewski, R. Czernecki, R. Czernecki, R. Kucharski, R. Kucharski, G. Targowski, G. Targowski, } "Latest developments in AlGaInN laser diode technology", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862518 (27 March 2013); doi: 10.1117/12.2006079; https://doi.org/10.1117/12.2006079
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