4 March 2013 Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition
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Abstract
Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ~1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 ºC. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.
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Zachary Lochner, Zachary Lochner, Tsung-Ting Kao, Tsung-Ting Kao, Yuh-Shiuan Liu, Yuh-Shiuan Liu, Xiao-Hang Li, Xiao-Hang Li, Md. Mahbub Satter, Md. Mahbub Satter, Shyh-Chiang Shen, Shyh-Chiang Shen, P. Douglas Yoder, P. Douglas Yoder, Jae-Hyun Ryou, Jae-Hyun Ryou, Russell D. Dupuis, Russell D. Dupuis, Yong Wei, Yong Wei, Hongen Xie, Hongen Xie, Alec Fischer, Alec Fischer, Fernando A. Ponce, Fernando A. Ponce, } "Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862519 (4 March 2013); doi: 10.1117/12.2008830; https://doi.org/10.1117/12.2008830
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