4 March 2013 High optical power ultraviolet superluminescent InGaN diodes
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Abstract
We present ultraviolet InGaN superluminescent diodes fabricated in a “j-shape” waveguide geometry. Under CW operation at room temperatures, devices emit optical power up to 80 mW at 395 nm with no tendency for lasing. The chip length was 1.5 mm. Emitted optical power was very sensitive to the device temperature. This effect limited the maximum optical power obtained in CW operation. With better packaging scheme better performance in CW regime should be achieved.
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Anna Kafar, Anna Kafar, Szymon Stańczyk, Szymon Stańczyk, Grzegorz Targowski, Grzegorz Targowski, Robert Czernecki, Robert Czernecki, Przemek Wiśniewski, Przemek Wiśniewski, Mike Leszczyński, Mike Leszczyński, Tadeusz Suski, Tadeusz Suski, Piotr Perlin, Piotr Perlin, } "High optical power ultraviolet superluminescent InGaN diodes", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251S (4 March 2013); doi: 10.1117/12.2002488; https://doi.org/10.1117/12.2002488
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