4 March 2013 Thermal properties of InGaN laser diodes and arrays
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Junction temperature of a laser diode (LD) determines the value of threshold current, maximum achievable power and device lifetime. In this work we studied this parameter by a method of comparing current-voltage characteristics measured under pulse bias (at various temperatures) with DC characteristic obtained at room temperature. As exemplary devices we chose various laser diode arrays and single emitter laser with different substrate thickness. The results show, that the primary factor determining thermal resistance of the device is the chip’s surface, which means, that a dominating mechanism is related with a heat transfer between the chip and the heat sink.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Szymon Stańczyk, Szymon Stańczyk, Anna Kafar, Anna Kafar, Grzegorz Targowski, Grzegorz Targowski, Przemek Wiśniewski, Przemek Wiśniewski, Irina Makarowa, Irina Makarowa, Tadeusz Suski, Tadeusz Suski, Piotr Perlin, Piotr Perlin, } "Thermal properties of InGaN laser diodes and arrays", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862521 (4 March 2013); doi: 10.1117/12.2002494; https://doi.org/10.1117/12.2002494


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