27 March 2013 Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy
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Abstract
In this work we study the growth mechanisms of InGaN in plasma-assisted molecular beam epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen fluxes was examined. We propose microscopic model of InGaN growth by PAMBE postulating different indium adatom incorporation mechanisms on two nonequivalent atomic step edges of wurtzite crystal. The different roles of gallium and nitrogen fluxes during the growth of InGaN layers is discussed.
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Henryk Turski, Henryk Turski, Marcin Siekacz, Marcin Siekacz, Marta Sawicka, Marta Sawicka, Zbig R. Wasilewski, Zbig R. Wasilewski, Sylwester Porowski, Sylwester Porowski, Czesław Skierbiszewski, Czesław Skierbiszewski, } "Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862527 (27 March 2013); doi: 10.1117/12.2003850; https://doi.org/10.1117/12.2003850
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