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4 March 2013 Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates
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Semipolar (11macron01) GaN layers and GaN/InGaN LED structures were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. Optical properties of the semipolar samples were studied by steady-state and time-resolved photoluminescence (PL). Photon energies and intensities of emission lines from steady-state PL as well as carrier decay times from time-resolved PL were correlated with the distributions of extended defects studied by spatially resolved cathodoluminescence and nearfield scanning optical microscopy. Intensity of donor-bound exciton (DX) emission from both coalesced and non-coalesced semipolar layers is comparable to that of state-of-art c-plane GaN template. To gain insight into the contribution from near surface region and deeper portion of the layers to carrier dynamics in polar c-plane and semipolar (11macron01) GaN, time-resolved PL was measured with two different excitation wavelengths of 267 and 353 nm, which provide different excitation depths of about 50 nm and 100 nm, respectively. Time-resolve PL data indicate that the near-surface layer is relatively free from nonradiative centers (point and/or extended defects), while deeper region of the semipolar film (beyond of ~100 nm in depth) is more defective, giving rise to shorter decay times.
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N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç "Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252G (4 March 2013);

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