4 March 2013 Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects
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Abstract
In an effort to investigate the particulars of their stability, In18.5%Al81.5%N/GaN HFETs were subjected to on-state electrical stress for intervals totaling up to 20 hours. The current gain cutoff frequency fT showed a constant increase after each incremental stress, which was consistent with the decreased gate lag and the decreased phase noise. Extraction of small-signal circuit parameters demonstrated that the increase of fT is due to a decrease in the gate-source capacitance (Cgs) and gate-drain capacitance (Cgd) as well as the increased microwave transconductance (gm). All these behaviors are consistent with the diminishing of the gate extension (“virtual gate”) around the gate area.
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Congyong Zhu, Congyong Zhu, Fan Zhang, Fan Zhang, Romualdo A. Ferreyra, Romualdo A. Ferreyra, Xing Li, Xing Li, Cemil Kayis, Cemil Kayis, Vitaliy Avrutin, Vitaliy Avrutin, Ümit Özgür, Ümit Özgür, Hadis Morkoç, Hadis Morkoç, } "Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252H (4 March 2013); doi: 10.1117/12.2000558; https://doi.org/10.1117/12.2000558
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