27 March 2013 Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations
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Abstract
Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20- 21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and non-polar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgKα radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations.
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O. Romanyuk, O. Romanyuk, P. Jiříček, P. Jiříček, P. Mutombo, P. Mutombo, T. Paskova, T. Paskova, I. Bartoš, I. Bartoš, } "Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252I (27 March 2013); doi: 10.1117/12.2006400; https://doi.org/10.1117/12.2006400
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