18 March 2013 Prospects on laser processed wide band gap oxides optical materials
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862607 (2013) https://doi.org/10.1117/12.2016508
Event: SPIE OPTO, 2013, San Francisco, California, United States
Wide band gap oxide media including 4fn or 3dn ions attracts a considerable attention in the context of photonics and bio-photonics applications due to the electromagnetic widespread spectral range covered by the intraionic radiative relaxation of the charged lanthanide and transition metal ions. Converting ultraviolet commercial light into visible luminescence continues to raise interest for the solid state light market, justifying the demand for new and efficient phosphors with wide spectrum coverage and improved thermal quenching behavior. New materials and methods have been thoroughly investigated for the desired purposes. In this work, we report on laser processing for the growth of oxides media such as ZrO2, ZnO among other oxide hosts. The transparent crystalline materials in-situ doped with different amounts of lanthanide or transition metal ions are explored in order to enhance the room temperature ions luminescence by pumping the samples with ultraviolet photons. Spectroscopic studies of the undoped and doped oxide hosts were performed using Raman spectroscopy, photoluminescence (PL) and photoluminescence excitation (PLE).
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M. R. Soares, M. R. Soares, J. Rodrigues, J. Rodrigues, N. F. Santos, N. F. Santos, C. Nico, C. Nico, R. G. Carvalho, R. G. Carvalho, A. J. S. Fernandes, A. J. S. Fernandes, M. P. Graça, M. P. Graça, L. Rino, L. Rino, M. J. Soares, M. J. Soares, A. J. Neves, A. J. Neves, F. M. Costa, F. M. Costa, T. Monteiro, T. Monteiro, } "Prospects on laser processed wide band gap oxides optical materials", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862607 (18 March 2013); doi: 10.1117/12.2016508; https://doi.org/10.1117/12.2016508

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