Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals

Buguo Wang; Matthew Mann; Bruce Claflin; Michael Snure; David C. Look

doi:10.1117/12.2004460

18 March 2013 Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals

Buguo Wang, Matthew Mann, Bruce Claflin, Michael Snure, David C. Look

Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862609 (2013) https://doi.org/10.1117/12.2004460
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Bulk ZnO crystals were grown by the hydrothermal technique with Al₂O₃ added to the solution in an attempt to obtain Al-doped ZnO crystals. Aluminum and indium co-doped ZnO were also grown by the same technique. Adding Al₂O₃ to the growth solution has a significant impact on the ZnO growth ⎯ either preventing overgrowth and dissolving the seed growth or degrading the crystalline quality; nevertheless, the resulting crystals of both Al:ZnO and Al/In:ZnO are highly conductive, similar to In and Ga doped ZnO crystals, with a resistivity approaching 0.01 Ω cm, as revealed by temperature-dependent Hall-effect measurements. Photoluminescence spectra at 18 K show Al⁰-bound-exciton peak energies of 3.3604 eV on the Zn face and 3.3609 eV on the O face for the Al-doped ZnO crystals. Similarly both an Al⁰- bound-exciton peak at 3.3604 eV and an In⁰-bound-exciton peak at 3.3575 eV were found on the Al/In-co-doped crystals. The electrical properties of all group III doped ZnO crystals grown hydrothermally are compared with each other and with Al:ZnO obtained by other growth methods.

Citation Download Citation

Buguo Wang, Matthew Mann, Bruce Claflin, Michael Snure, and David C. Look "Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862609 (18 March 2013); https://doi.org/10.1117/12.2004460

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