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18 March 2013 Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862609 (2013)
Event: SPIE OPTO, 2013, San Francisco, California, United States
Bulk ZnO crystals were grown by the hydrothermal technique with Al2O3 added to the solution in an attempt to obtain Al-doped ZnO crystals. Aluminum and indium co-doped ZnO were also grown by the same technique. Adding Al2O3 to the growth solution has a significant impact on the ZnO growth ⎯ either preventing overgrowth and dissolving the seed growth or degrading the crystalline quality; nevertheless, the resulting crystals of both Al:ZnO and Al/In:ZnO are highly conductive, similar to In and Ga doped ZnO crystals, with a resistivity approaching 0.01 Ω cm, as revealed by temperature-dependent Hall-effect measurements. Photoluminescence spectra at 18 K show Al0-bound-exciton peak energies of 3.3604 eV on the Zn face and 3.3609 eV on the O face for the Al-doped ZnO crystals. Similarly both an Al0- bound-exciton peak at 3.3604 eV and an In0-bound-exciton peak at 3.3575 eV were found on the Al/In-co-doped crystals. The electrical properties of all group III doped ZnO crystals grown hydrothermally are compared with each other and with Al:ZnO obtained by other growth methods.
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Buguo Wang, Matthew Mann, Bruce Claflin, Michael Snure, and David C. Look "Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862609 (18 March 2013);

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