18 March 2013 Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86260D (2013) https://doi.org/10.1117/12.2002441
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Single crystal β-Ga2O3 epitaxial layers have been prepared on c-axis (0001) sapphire substrates using metalorganic chemical vapor deposition technique at relatively low temperature. Post-annealing of β-Ga2O3 single crystals up to 800 °C does not affect the crystallinity, explored by x-ray diffraction, showing that β-Ga2O3 epitaxial layers are highly (-201) oriented. Metal-semiconductor-metal devices are fabricated on single crystals to study their photoresponsivity. A significant improvement in performance of post annealed-based devices is observed, attributed to point defect reduction. Annealing of as-grown samples results to a significant decrease in both oxygen and gallium vacancies, which are sources of current leakage.
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Ray-Hua Horng, Ray-Hua Horng, Parvaneh Ravadgar, Parvaneh Ravadgar, } "Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260D (18 March 2013); doi: 10.1117/12.2002441; https://doi.org/10.1117/12.2002441
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