18 March 2013 Properties of high-density two-dimensional electron gases at Mott/band insulator interfaces
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86260F (2013) https://doi.org/10.1117/12.2009086
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3, are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO3/SrTiO3 interface. Insights into charge distribution, the influence of the electrostatic boundary conditions, and strong correlation effects will be presented.
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Susanne Stemmer, Susanne Stemmer, Pouya Moetakef, Pouya Moetakef, Tyler Cain, Tyler Cain, Clayton Jackson, Clayton Jackson, Daniel Ouellette, Daniel Ouellette, James R. Williams, James R. Williams, David Goldhaber-Gordon, David Goldhaber-Gordon, Leon Balents, Leon Balents, S. James Allen, S. James Allen, } "Properties of high-density two-dimensional electron gases at Mott/band insulator interfaces", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260F (18 March 2013); doi: 10.1117/12.2009086; https://doi.org/10.1117/12.2009086
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