18 March 2013 On the origin of strain relaxation in epitaxial CdZnO layers
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86260N (2013) https://doi.org/10.1117/12.2002969
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
The origin of a double peak, detected by X-ray diffraction (XRD), in a wurtzite CdxZn1-xO (x=0.17) epilayer, is investigated using Rutherford backscattering spectrometry in channeling geometry (RBS/C). In-depth compositional characterization by RBS/C demonstrates that strain relaxation does not take place via compositional phase separation and does not cause any compositional pulling effects. On the contrary, RBS/C angular scans demonstrate that relaxation is a consequence of progressive structural changes during the heteroepitaxial growth of the film on MgZnO, likely due to the large distortion of the lattice induced by the high Cd content.
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A. Redondo-Cubero, A. Redondo-Cubero, J. Rodrigues, J. Rodrigues, M. Brandt, M. Brandt, P. Schäfer, P. Schäfer, F. Henneberger, F. Henneberger, M. R. Correia, M. R. Correia, T. Monteiro, T. Monteiro, E. Alves, E. Alves, K. Lorenz, K. Lorenz, "On the origin of strain relaxation in epitaxial CdZnO layers", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260N (18 March 2013); doi: 10.1117/12.2002969; https://doi.org/10.1117/12.2002969
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