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18 March 2013 Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86260V (2013)
Event: SPIE OPTO, 2013, San Francisco, California, United States
Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.
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T. Shimogaki, T. Ofuji, N. Tetsuyama, K. Okazaki, M. Higashihata, D. Nakamura, H. Ikenoue, T. Asano, and T. Okada "Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260V (18 March 2013); doi: 10.1117/12.2003856;

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