18 March 2013 TiO2 thin film transistor by atomic layer deposition
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862616 (2013) https://doi.org/10.1117/12.2005528
Event: SPIE OPTO, 2013, San Francisco, California, United States
In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO2 has band to band absorption mechanism.
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Ali K. Okyay, Ali K. Okyay, Feyza Oruç, Feyza Oruç, Furkan Çimen, Furkan Çimen, Levent E. Aygün, Levent E. Aygün, "TiO2 thin film transistor by atomic layer deposition", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862616 (18 March 2013); doi: 10.1117/12.2005528; https://doi.org/10.1117/12.2005528

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